专利名称: METHOD FOR DIRECT BONDING OF METALLIC CONDUCTORS TO A CERAMIC SUBSTRATE
公开(告)号:
公开(公告)日: 2008-07-03 00:00:00
申请(专利)号: US2008156848
申请日: 2007-10-10 00:00:00
发明(设计)人:
(申请)专利权(人): HIRSHBERG ARNON (IL)
内容: A method to provide direct bonding of wires to silicon for microelectronic and micro-electromechanical systems (MEMS). The method includes preparing a rough "pothole" during one of the many deep etch steps already provided in MEMS fabrication. The method also includes roughening of the smooth silicon surface in and around the rough pothole and plastically deforming a ball-bond into the rough pothole, such that the interconnection will eliminate a costly metallization layer, and thereby lower fabrication expenses and allow high temperature processing. 

发布日期:2008-11-14 09:11:00

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