| 专利名称： | SEMICONDUCTOR CERAMIC AND MULTILAYERED-TYPE SEMICONDUCTOR CERAMIC CAPACITOR |
| 公开（告）号： | |
| 公开（公告）日： | 2008-10-09 00:00:00 |
| 申请（专利）号： | US2008248286(A1) |
| 申请日： | 2008-06-24 00:00:00 |
| 发明（设计）人： | MURATA MANUFACTURING CO (JP) |
| (申请)专利权（人）： | KAWAMOTO MITSUTOSHI (JP);TANI SHINSUKE (JP) |
| 内容： | A semiconductor ceramic has a mixing molar ratio m between the Sr site and the Ti site satisfying the relationship 1.000<=m<1.020, a donor element in an amount of 0.8 to 2.0 moles relative to 100 moles of the Ti element dissolved in the Sr site to form a solid solution, the donor element having a higher valency than the Sr element, a transition metal element, such as Mn, incorporated in an amount of 0.3 to 1.0 mole relative to 100 moles of the Ti element so as to be segregated in grain boundaries, and an average grain size of crystal grains is 1.0 mum or less.;A component body in which semiconductor ceramic layers are stacked and internal electrodes 2 are embedded provides a SrTiO3-based grain boundary insulation type semiconductor ceramic having a high apparent relative dielectric constant of 5,000 or more even if the average grain size of crystal grains is decreased to 1 mum or less, and a semiconductor ceramic capacitor in which it is possible to achieve both a reduction in layer thickness and improvement in dielectric characteristics by using the SrTiO3-based grain boundary insulation type semiconductor ceramic. |
发布日期：2009-08-07 04:18:00