| 专利名称： | Integration of capacitive elements in the form of perovskite ceramic |
| 公开（告）号： | |
| 公开（公告）日： | 2007-01-11 00:00:00 |
| 申请（专利）号： | US20060407681(US2007007565) |
| 申请日： | 2006-04-20 00:00:00 |
| 发明（设计）人： | UNIV FRANCOIS RABELAIS UFR SCI (FR) |
| (申请)专利权（人）： | GOUX LUDOVIC (BE);GERVAIS MONIQUE (FR) |
| 内容： | The use of a conductive bidimensional perovskite as an interface between a silicon, metal, or amorphous oxide substrate and an insulating perovskite deposited by epitaxy, as well as an integrated circuit and its manufacturing process comprising a layer of an insulating perovskite deposited by epitaxy to form the dielectric of capacitive elements having at least an electrode formed of a conductive bidimensional perovskite forming an interface between said dielectric and an underlying silicon, metal, or amorphous oxide substrate. |
发布日期：2007-08-20 15:15:00