| 专利名称： | BARIUM TITANATE-BASE SEMICONDUCTOR CERAMIC |
| 公开（告）号： | |
| 公开（公告）日： | 2007-01-04 00:00:00 |
| 申请（专利）号： | DE19986036471(DE69836471D) |
| 申请日： | 1998-09-02 00:00:00 |
| 发明（设计）人： | TDK CORP (JP) |
| (申请)专利权（人）： | TAKAHASHI CHIHIRO (JP);SATO SHIGEKI (JP) |
| 内容： | The barium titanate type semiconducting ceramic of the present invention is so arranged as to contain BaTiO3 as a main component thereof, and Ba2TiSi2O8 and BanTimOn+2m (1 <= n <= 4, 2 <= m <= 13, n < m) respectively as trace-phase compositions, wherein the ratio of the contents of Ba2TiSi2O8 and BanTimOn+2m (Ba2TiSi2O8/BanTimOn+2m) as the trace-phase compositions is in the range of 0.5 to 80.0. Therefore, it is highly excellent in voltage resistance and ensures high reliability as a product element. Moreover, it has an appropriate room temperature resistivity rho 25 for fully functioning as a product element. |
发布日期：2007-08-21 10:44:00