首页>>国外专利>>Deposition of perovskite and other compound ceramic films for dielectric applications
| 专利名称： | Deposition of perovskite and other compound ceramic films for dielectric applications |
| 公开（告）号： | |
| 公开（公告）日： | 2007-03-08 00:00:00 |
| 申请（专利）号： | US20050218652(US2007053139) |
| 申请日： | 2005-09-02 00:00:00 |
| 发明（设计）人： | |
| (申请)专利权（人）： | ZHANG HONGMEI (US);DEMARAY RICHARD E (US) |
| 内容： | In accordance with the present invention, deposition of perovskite material, for example barium strontium titanite (BST) film, by a pulsed-dc physical vapor deposition process or by an RF sputtering process is presented. Such a deposition can provide a high deposition rate deposition of a layer of perovskite. Some embodiments of the deposition address the need for high rate deposition of perovskite films, which can be utilized as a dielectric layer in capacitors, other energy storing devices and micro-electronic applications. Embodiments of the process according to the present invention can eliminate the high temperature (>700 DEG C.) anneal step that is conventionally needed to crystallize the BST layer. |
发布日期：2007-08-23 15:23:00