| 专利名称： | DIELECTRIC CERAMIC COMPOSITION FOR ELECTRONIC DEVICE |
| 公开（告）号： | |
| 公开（公告）日： | 2007-02-15 00:00:00 |
| 申请（专利）号： | WO2005JP14770(WO2007017950) |
| 申请日： | 2005-08-11 00:00:00 |
| 发明（设计）人： | NEOMAX CO LTD (JP)SHIMADA TAKESHI (JP) |
| (申请)专利权（人）： | SHIMADA TAKESHI (JP) |
| 内容： | This invention provides a dielectric ceramic composition for an electronic device that has a high specific permittivity er and a high Qf value, and a low temperature coefficient tf at a resonance frequency, and can control the temperature coefficient tf while maintaining the high Qf value. This dielectric ceramic composition is an LnAlO3-CaTiO3 dielectric ceramic composition. In this composition, the molar ratio between LnAlO3 and CaTiO3 is optimized, and Al is replaced with a small amount of Ga. The above constitution provides a structure comprising an LnAlGaO3-CaTiO3 solid solution as a main phase and an Al-Ga oxide solid solution as a second phase, an a-Al2O3 being substantially absent in the structure. Further, the temperature coefficient tf can be controlled while maintaining the small temperature coefficient tf at the resonance frequency and the high Qf value. |
发布日期：2007-08-23 09:50:00