| 专利名称： | Ceramic composition for circuit substrat and its fabrication |
| 公开（告）号： | |
| 公开（公告）日： | 2007-03-29 00:00:00 |
| 申请（专利）号： | DE19956035391(DE69535391D) |
| 申请日： | 1995-07-27 00:00:00 |
| 发明（设计）人： | HITACHI LTD (JP) |
| (申请)专利权（人）： | TANEI HIRAYOSHI (JP);IWANAGA SHOICHI (JP) |
| 内容： | The present invention provides ceramic circuit substrate which is sintered at 900 to 1,050 DEG C and have low relative dielectric constant, thermal expansion coefficient comparable to that of silicon, and high bending strength, and a method of manufacturing the same. A glass is employed as row material, of which softening point is 850 to 1,100 DEG C, that is, a glass having a composition included in an area in Fig. 1 (triangular composition diagram of SiO2-B2O3-R2O, a composition is represented by the position of a small circle, the number in a small circle represents the composition number) defined with lines connecting points representing the first, third, tenth, eleventh, and fourth compositions respectively. |
发布日期：2007-08-24 10:19:00