专利名称: | Substrate for thin film formation, thin film substrate, and light-emitting device |
公开(告)号: | |
公开(公告)日: | 2006-07-27 00:00:00 |
申请(专利)号: | US20050320873 ,US2006163605 |
申请日: | |
发明(设计)人: | |
(申请)专利权(人): | MIYAHARA KENICHIRO (JP) |
内容: | A substrate for forming a thin film composed mainly of gallium nitride, indium nitride or aluminum nitride, the substrate consisting of a sintered compact composed mainly of a ceramic material; and a thin-film substrate furnished with the thin film. The use of the sintered compact composed mainly of a ceramic material, especially translucent sintered compact, as the substrate enables formation thereon of a highly crystalline single-crystal thin film composed mainly of at least one member selected from among gallium nitride, indium nitride and aluminum nitride. Thus, there is provided a thin-film substrate furnished with a highly crystalline single-crystal thin film. Further, the use of the sintered compact composed mainly of a ceramic material enables providing of a light emitting element excelling in luminous efficiency. |
发布日期:2006-11-26 19:19:00