专利名称: Substrate for thin film formation, thin film substrate, and light-emitting device
公开(告)号:
公开(公告)日: 2006-07-27 00:00:00
申请(专利)号: US20050320873 ,US2006163605
申请日:
发明(设计)人:
(申请)专利权(人): MIYAHARA KENICHIRO (JP)
内容:     A substrate for forming a thin film composed mainly of gallium nitride, indium nitride or aluminum nitride, the substrate consisting of a sintered compact composed mainly of a ceramic material; and a thin-film substrate furnished with the thin film. The use of the sintered compact composed mainly of a ceramic material, especially translucent sintered compact, as the substrate enables formation thereon of a highly crystalline single-crystal thin film composed mainly of at least one member selected from among gallium nitride, indium nitride and aluminum nitride. Thus, there is provided a thin-film substrate furnished with a highly crystalline single-crystal thin film. Further, the use of the sintered compact composed mainly of a ceramic material enables providing of a light emitting element excelling in luminous efficiency.

发布日期:2006-11-26 19:19:00

关于我们||设为首页 地址:江西省景德镇陶瓷大学新厂校区 工程中心一楼 电话:0798-8499727 传真:0798-8498744 信箱:zscq@jci.edu.cn 版权所有:江西省陶瓷知识产权信息中心 中国陶瓷知识产权信息中心 备案编号:赣ICP备11004262号-3