专利名称: METHOD FOR PRODUCTION OF CERAMIC SEMICONDUCTORS MADE FROM METAL OXIDES
公开(告)号:
公开(公告)日: 2006-07-27 00:00:00
申请(专利)号: WO2006FR50040,WO2006077355
申请日:
发明(设计)人: AREVA T & D SA (FR)HASSANZADEH MEHRDAD (FR)
(申请)专利权(人): HASSANZADEH MEHRDAD (FR);MACHADO-BAILLY CELINE
内容:     The invention relates to a method for production of a ceramic semiconductor, preferably made from at least one base metal oxide which is a simple oxide of a single base metal and at least one doping metal oxide, said ceramic having a porosity less than or equal to 5 %, preferably less than or equal to 3 %, more preferably less than or equal to 1 %, in which the following successive steps are carried out: a powder is provided made up of one or more base metal oxides, said oxides being simple oxides of a single base metal, one or more on base metals in a non-oxidised metallic form, one or more oxides of doping metals and optionally one or more doping metals in a non-oxidised metallic form, said powder is moulded and the moulded powder is sintered. Said ceramic semiconductor may be used for the production of non-linear resistances with regard to voltage and particularly of varistors. 

发布日期:2006-11-26 20:37:00

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