| 专利名称： | Porous ceramic materials as low-k films in semiconductor devices |
| 公开（告）号： | |
| 公开（公告）日： | 2007-02-14 00:00:00 |
| 申请（专利）号： | GB20060021771(GB2429117) |
| 申请日： | 2005-06-15 00:00:00 |
| 发明（设计）人： | INTEL CORP (US) |
| (申请)专利权（人）： | KLOSTER GRANT M (US);LEU JIHPERNG (US) |
| 内容： | A method for selecting and forming a low-k, relatively high E porous ceramic film in a semiconductor device is described. A ceramic material is selected having a relatively high Young's modulus and relatively lower dielectric constant. The k is reduced by making the film porous. |
发布日期：2007-08-22 15:43:00